Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

H. W. Hsu, H. S. Huang, H. W. Chen, Chin-Pao Cheng, K. C. Lin, S. Y. Chen, M. C. Wang, Chuan-Hsi Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The high κ gate dielectrics of MOS capacitors with HfZrLaO (standing for HfO 2 doped with La and Zr) or HfLaO (standing for HfO 2 doped with La) have been fabricated by atomic-layer-deposition (ALD), and the time-dependent-dielectric-breakdown (TDDB) reliability properties have also been investigated. The equivalent oxide thickness (EOT) of HfLaO or HfZrLaO is 0.72 nm or 0.68 nm, respectively. In terms of the gate leakage current density (J g ) versus EOT (J g -EOT) performance, HfZrLaO has a better characteristic in comparison with HfLaO. In terms of TDDB characteristics, the maximum voltages projected to have 10-year TDDB lifetime under 85 °C operation for HfZrLaO and HfLaO ultra-thin gate dielectrics are 1.87 V and 2.03 V, respectively. In addition, some important results, such as activation energy and field acceleration parameter, for HfLaO and HfZrLaO gate dielectrics are compared and summarized in this research.

Original languageEnglish
Pages (from-to)2-6
Number of pages5
JournalSolid-State Electronics
Volume77
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Gate dielectrics
Electric breakdown
metal oxide semiconductors
capacitors
Capacitors
breakdown
Metals
Oxides
MOS capacitors
Atomic layer deposition
Leakage currents
Current density
Activation energy
oxides
Electric potential
atomic layer epitaxy
Oxide semiconductors
leakage
current density
activation energy

Keywords

  • HfLaO
  • HfZrLaO
  • Lifetime
  • Time dependent dielectric breakdown (TDDB)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. / Hsu, H. W.; Huang, H. S.; Chen, H. W.; Cheng, Chin-Pao; Lin, K. C.; Chen, S. Y.; Wang, M. C.; Liu, Chuan-Hsi.

In: Solid-State Electronics, Vol. 77, 01.11.2012, p. 2-6.

Research output: Contribution to journalArticle

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T1 - Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

AU - Hsu, H. W.

AU - Huang, H. S.

AU - Chen, H. W.

AU - Cheng, Chin-Pao

AU - Lin, K. C.

AU - Chen, S. Y.

AU - Wang, M. C.

AU - Liu, Chuan-Hsi

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N2 - The high κ gate dielectrics of MOS capacitors with HfZrLaO (standing for HfO 2 doped with La and Zr) or HfLaO (standing for HfO 2 doped with La) have been fabricated by atomic-layer-deposition (ALD), and the time-dependent-dielectric-breakdown (TDDB) reliability properties have also been investigated. The equivalent oxide thickness (EOT) of HfLaO or HfZrLaO is 0.72 nm or 0.68 nm, respectively. In terms of the gate leakage current density (J g ) versus EOT (J g -EOT) performance, HfZrLaO has a better characteristic in comparison with HfLaO. In terms of TDDB characteristics, the maximum voltages projected to have 10-year TDDB lifetime under 85 °C operation for HfZrLaO and HfLaO ultra-thin gate dielectrics are 1.87 V and 2.03 V, respectively. In addition, some important results, such as activation energy and field acceleration parameter, for HfLaO and HfZrLaO gate dielectrics are compared and summarized in this research.

AB - The high κ gate dielectrics of MOS capacitors with HfZrLaO (standing for HfO 2 doped with La and Zr) or HfLaO (standing for HfO 2 doped with La) have been fabricated by atomic-layer-deposition (ALD), and the time-dependent-dielectric-breakdown (TDDB) reliability properties have also been investigated. The equivalent oxide thickness (EOT) of HfLaO or HfZrLaO is 0.72 nm or 0.68 nm, respectively. In terms of the gate leakage current density (J g ) versus EOT (J g -EOT) performance, HfZrLaO has a better characteristic in comparison with HfLaO. In terms of TDDB characteristics, the maximum voltages projected to have 10-year TDDB lifetime under 85 °C operation for HfZrLaO and HfLaO ultra-thin gate dielectrics are 1.87 V and 2.03 V, respectively. In addition, some important results, such as activation energy and field acceleration parameter, for HfLaO and HfZrLaO gate dielectrics are compared and summarized in this research.

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