Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Chuan-Hsi Liu, Y. L. Chen, Chin-Pao Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/21 → 11/6/24

Fingerprint

Gate dielectrics
Electric breakdown
Capacitors
Atomic layer deposition
Metals
Oxide semiconductors

Keywords

  • HfLaO
  • HfZrLaO
  • time dependent dielectric breakdown (TDDB)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Liu, C-H., Chen, Y. L., Cheng, C-P., Chen, H. W., Hsu, H. W., Chen, S. Y., ... Wang, M. C. (2011). Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991693] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. / Liu, Chuan-Hsi; Chen, Y. L.; Cheng, Chin-Pao; Chen, H. W.; Hsu, H. W.; Chen, S. Y.; Huang, H. S.; Wang, M. C.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991693 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, C-H, Chen, YL, Cheng, C-P, Chen, HW, Hsu, HW, Chen, SY, Huang, HS & Wang, MC 2011, Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991693, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 11/6/21. https://doi.org/10.1109/INEC.2011.5991693
Liu C-H, Chen YL, Cheng C-P, Chen HW, Hsu HW, Chen SY et al. Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991693. (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693
Liu, Chuan-Hsi ; Chen, Y. L. ; Cheng, Chin-Pao ; Chen, H. W. ; Hsu, H. W. ; Chen, S. Y. ; Huang, H. S. ; Wang, M. C. / Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. (Proceedings - International NanoElectronics Conference, INEC).
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abstract = "Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.",
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AU - Cheng, Chin-Pao

AU - Chen, H. W.

AU - Hsu, H. W.

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AU - Huang, H. S.

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AB - Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

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