Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Chuan-Hsi Liu; Y. L. Chen; Chin-Pao Cheng; H. W. Chen; H. W. Hsu; S. Y. Chen; H. S. Huang; M. C. Wang

doi:10.1109/INEC.2011.5991693

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Chuan-Hsi Liu, Y. L. Chen, Chin-Pao Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang

Department of Mechartronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991693
Publication status	Published - 2011 Sep 26
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

HfLaO
HfZrLaO
time dependent dielectric breakdown (TDDB)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991693

Cite this

Liu, C-H., Chen, Y. L., Cheng, C-P., Chen, H. W., Hsu, H. W., Chen, S. Y., Huang, H. S., & Wang, M. C. (2011). Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991693] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. / Liu, Chuan-Hsi; Chen, Y. L.; Cheng, Chin-Pao; Chen, H. W.; Hsu, H. W.; Chen, S. Y.; Huang, H. S.; Wang, M. C.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991693 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, C-H, Chen, YL, Cheng, C-P, Chen, HW, Hsu, HW, Chen, SY, Huang, HS & Wang, MC 2011, Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991693, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991693

Liu C-H, Chen YL, Cheng C-P, Chen HW, Hsu HW, Chen SY et al. Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991693. (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693

Liu, Chuan-Hsi ; Chen, Y. L. ; Cheng, Chin-Pao ; Chen, H. W. ; Hsu, H. W. ; Chen, S. Y. ; Huang, H. S. ; Wang, M. C. / Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. (Proceedings - International NanoElectronics Conference, INEC).

@inproceedings{d95620683e2841e3b4877c8239b89f71,

title = "Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics",

abstract = "Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.",

keywords = "HfLaO, HfZrLaO, time dependent dielectric breakdown (TDDB)",

author = "Chuan-Hsi Liu and Chen, {Y. L.} and Chin-Pao Cheng and Chen, {H. W.} and Hsu, {H. W.} and Chen, {S. Y.} and Huang, {H. S.} and Wang, {M. C.}",

year = "2011",

month = sep,

day = "26",

doi = "10.1109/INEC.2011.5991693",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

TY - GEN

T1 - Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

AU - Liu, Chuan-Hsi

AU - Chen, Y. L.

AU - Cheng, Chin-Pao

AU - Chen, H. W.

AU - Hsu, H. W.

AU - Chen, S. Y.

AU - Huang, H. S.

AU - Wang, M. C.

PY - 2011/9/26

Y1 - 2011/9/26

N2 - Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

AB - Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

KW - HfLaO

KW - HfZrLaO

KW - time dependent dielectric breakdown (TDDB)

UR - http://www.scopus.com/inward/record.url?scp=80053034607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053034607&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991693

DO - 10.1109/INEC.2011.5991693

M3 - Conference contribution

AN - SCOPUS:80053034607

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Abstract

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Keywords

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