Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Chuan-Hsi Liu; Y. L. Chen; Chin-Pao Cheng; H. W. Chen; H. W. Hsu; S. Y. Chen; H. S. Huang; M. C. Wang

doi:10.1109/INEC.2011.5991693

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Chuan-Hsi Liu, Y. L. Chen, Chin-Pao Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991693
Publication status	Published - 2011 Sep 26
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country	Taiwan
City	Tao-Yuan
Period	11/6/21 → 11/6/24

Keywords

HfLaO
HfZrLaO
time dependent dielectric breakdown (TDDB)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991693

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Liu, C-H., Chen, Y. L., Cheng, C-P., Chen, H. W., Hsu, H. W., Chen, S. Y., Huang, H. S., & Wang, M. C. (2011). Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991693] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. / Liu, Chuan-Hsi; Chen, Y. L.; Cheng, Chin-Pao; Chen, H. W.; Hsu, H. W.; Chen, S. Y.; Huang, H. S.; Wang, M. C.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991693 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, C-H, Chen, YL, Cheng, C-P, Chen, HW, Hsu, HW, Chen, SY, Huang, HS & Wang, MC 2011, Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991693, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 11/6/21. https://doi.org/10.1109/INEC.2011.5991693

Liu C-H, Chen YL, Cheng C-P, Chen HW, Hsu HW, Chen SY et al. Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991693. (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693

Liu, Chuan-Hsi ; Chen, Y. L. ; Cheng, Chin-Pao ; Chen, H. W. ; Hsu, H. W. ; Chen, S. Y. ; Huang, H. S. ; Wang, M. C. / Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. (Proceedings - International NanoElectronics Conference, INEC).

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title = "Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics",

abstract = "Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.",

keywords = "HfLaO, HfZrLaO, time dependent dielectric breakdown (TDDB)",

author = "Chuan-Hsi Liu and Chen, {Y. L.} and Chin-Pao Cheng and Chen, {H. W.} and Hsu, {H. W.} and Chen, {S. Y.} and Huang, {H. S.} and Wang, {M. C.}",

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AU - Cheng, Chin-Pao

AU - Chen, H. W.

AU - Hsu, H. W.

AU - Chen, S. Y.

AU - Huang, H. S.

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AB - Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

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