Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Chuan-Hsi Liu, Y. L. Chen, Chin-Pao Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

Keywords

  • HfLaO
  • HfZrLaO
  • time dependent dielectric breakdown (TDDB)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Liu, C-H., Chen, Y. L., Cheng, C-P., Chen, H. W., Hsu, H. W., Chen, S. Y., Huang, H. S., & Wang, M. C. (2011). Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991693] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991693