THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy

Anup Kumar Sahoo; Wei Chen Au; Chan Shan Yang; Chia Ming Mai; Ci Ling Pan

doi:10.1109/IRMMW-THz46771.2020.9370878

THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy

Anup Kumar Sahoo, Wei Chen Au, Chan Shan Yang, Chia Ming Mai, Ci Ling Pan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.

Original language	English
Title of host publication	2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Publisher	IEEE Computer Society
Pages	741-742
Number of pages	2
ISBN (Electronic)	9781728166209
DOIs	https://doi.org/10.1109/IRMMW-THz46771.2020.9370878
Publication status	Published - 2020 Nov 8
Externally published	Yes
Event	45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, United States Duration: 2020 Nov 8 → 2020 Nov 13

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2020-November
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Country/Territory	United States
City	Virtual, Buffalo
Period	2020/11/08 → 2020/11/13

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/IRMMW-THz46771.2020.9370878

Cite this

Sahoo, A. K., Au, W. C., Yang, C. S., Mai, C. M., & Pan, C. L. (2020). THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy. In 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 (pp. 741-742). Article 9370878 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2020-November). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz46771.2020.9370878

THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy. / Sahoo, Anup Kumar; Au, Wei Chen; Yang, Chan Shan et al.
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020. IEEE Computer Society, 2020. p. 741-742 9370878 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2020-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sahoo, AK, Au, WC, Yang, CS, Mai, CM & Pan, CL 2020, THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy. in 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020., 9370878, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2020-November, IEEE Computer Society, pp. 741-742, 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020, Virtual, Buffalo, United States, 2020/11/08. https://doi.org/10.1109/IRMMW-THz46771.2020.9370878

Sahoo AK, Au WC, Yang CS, Mai CM, Pan CL. THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy. In 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020. IEEE Computer Society. 2020. p. 741-742. 9370878. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz46771.2020.9370878

@inproceedings{434ccdd4507d453a9151dc06468a8b69,

title = "THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy",

abstract = "In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.",

author = "Sahoo, {Anup Kumar} and Au, {Wei Chen} and Yang, {Chan Shan} and Mai, {Chia Ming} and Pan, {Ci Ling}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 ; Conference date: 08-11-2020 Through 13-11-2020",

year = "2020",

month = nov,

day = "8",

doi = "10.1109/IRMMW-THz46771.2020.9370878",

language = "English",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

publisher = "IEEE Computer Society",

pages = "741--742",

booktitle = "2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020",

}

TY - GEN

T1 - THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy

AU - Sahoo, Anup Kumar

AU - Au, Wei Chen

AU - Yang, Chan Shan

AU - Mai, Chia Ming

AU - Pan, Ci Ling

PY - 2020/11/8

Y1 - 2020/11/8

N2 - In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.

AB - In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.

UR - http://www.scopus.com/inward/record.url?scp=85103218166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85103218166&partnerID=8YFLogxK

U2 - 10.1109/IRMMW-THz46771.2020.9370878

DO - 10.1109/IRMMW-THz46771.2020.9370878

M3 - Conference contribution

AN - SCOPUS:85103218166

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

SP - 741

EP - 742

BT - 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020

PB - IEEE Computer Society

T2 - 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020

Y2 - 8 November 2020 through 13 November 2020

ER -

THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this