THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy

Anup Kumar Sahoo, Wei Chen Au, Chan Shan Yang, Chia Ming Mai, Ci Ling Pan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.

Original languageEnglish
Title of host publication2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
PublisherIEEE Computer Society
Pages741-742
Number of pages2
ISBN (Electronic)9781728166209
DOIs
Publication statusPublished - 2020 Nov 8
Externally publishedYes
Event45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, United States
Duration: 2020 Nov 82020 Nov 13

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2020-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Country/TerritoryUnited States
CityVirtual, Buffalo
Period2020/11/082020/11/13

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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