Threading dislocation induced low frequency noise in strained-Si nMOSFETs

W. C. Hua; M. H. Lee; P. S. Chen; M. J. Tsai; Chee W. Liu

doi:10.1109/LED.2005.853672

Threading dislocation induced low frequency noise in strained-Si nMOSFETs

W. C. Hua^*, M. H. Lee, P. S. Chen, M. J. Tsai, Chee W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent S_VG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm².

Original language	English
Pages (from-to)	667-669
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.853672
Publication status	Published - 2005 Sept
Externally published	Yes

Keywords

Flicker noise
MOSFET
Strained-Si
Threading dislocation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2005.853672

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@article{69a4d27408ed44cfad395a0ecc947c3d,

title = "Threading dislocation induced low frequency noise in strained-Si nMOSFETs",

abstract = "The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent SVG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm2.",

keywords = "Flicker noise, MOSFET, Strained-Si, Threading dislocation",

author = "Hua, {W. C.} and Lee, {M. H.} and Chen, {P. S.} and Tsai, {M. J.} and Liu, {Chee W.}",

note = "Funding Information: Manuscript received May 9, 2005; revised June 13, 2005. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract 93-2215-E-002-003 and Contract 93-2120-M-007-008. The review of this letter was arranged by Editor E. Sangiorgi.",

year = "2005",

month = sep,

doi = "10.1109/LED.2005.853672",

language = "English",

volume = "26",

pages = "667--669",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Threading dislocation induced low frequency noise in strained-Si nMOSFETs

AU - Hua, W. C.

AU - Lee, M. H.

AU - Chen, P. S.

AU - Tsai, M. J.

AU - Liu, Chee W.

N1 - Funding Information: Manuscript received May 9, 2005; revised June 13, 2005. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract 93-2215-E-002-003 and Contract 93-2120-M-007-008. The review of this letter was arranged by Editor E. Sangiorgi.

PY - 2005/9

Y1 - 2005/9

N2 - The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent SVG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm2.

AB - The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent SVG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm2.

KW - Flicker noise

KW - MOSFET

KW - Strained-Si

KW - Threading dislocation

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U2 - 10.1109/LED.2005.853672

DO - 10.1109/LED.2005.853672

M3 - Article

AN - SCOPUS:26444520423

SN - 0741-3106

VL - 26

SP - 667

EP - 669

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Threading dislocation induced low frequency noise in strained-Si nMOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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