Threading dislocation induced low frequency noise in strained-Si nMOSFETs

W. C. Hua, M. H. Lee, P. S. Chen, M. J. Tsai, Chee W. Liu

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent SVG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm2.

Original languageEnglish
Pages (from-to)667-669
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number9
DOIs
Publication statusPublished - 2005 Sep 1

Keywords

  • Flicker noise
  • MOSFET
  • Strained-Si
  • Threading dislocation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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