Thickness dependent reactivity and coercivity for ultrathin Co/Si(111) films

C. Chuang, W. Y. Chang, W. H. Chen, Jyh-Shen Tsay, W. B. Su, H. W. Chang, Y. D. Yao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

For Co/Si(111) films thinner than 15 ML, the thickness dependent reactivity and magnetic properties have been systematically studied. As the Co coverage increases, Co adatoms on the Si(111) surface show enhanced chemical reactivity for oxidation due to the change of the chemical state. After the saturation oxygen exposure, oxygen atoms interact with a thick Co layer to form a rougher interface. Complex adsorption kinetics of oxygen in the Co layer is observed. From the depth-profiling measurements for Co layers close to the Co-Si interface, the sputtering rate is enhanced due to that the solid surfaces of Si and Co-Si compounds are resistive against oxidation. The descending of the Kerr intensity by saturation oxygen exposure shows the limited diffusion length of oxygen atoms into the films. The inertness of the Co-Si interface, the reduction of pure cobalt and imperfection introduced by oxygen influence the coercivity of O/Co/Si(111).

Original languageEnglish
Pages (from-to)8371-8374
Number of pages4
JournalThin Solid Films
Volume519
Issue number23
DOIs
Publication statusPublished - 2011 Sep 30

Keywords

  • Cobalt
  • Oxygen exposure
  • Silicon
  • Surface magneto-optic Kerr effect
  • Ultrathin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Chuang, C., Chang, W. Y., Chen, W. H., Tsay, J-S., Su, W. B., Chang, H. W., & Yao, Y. D. (2011). Thickness dependent reactivity and coercivity for ultrathin Co/Si(111) films. Thin Solid Films, 519(23), 8371-8374. https://doi.org/10.1016/j.tsf.2011.03.089