Thermoelectric properties of Sb 2Te 3 thin films by electron beam evaporation

Chang Ho, Mu Jung Kao*, Cheng Hao Peng, Chin Guo Kuo, Kuohsiu David Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


This study applies the thermoelectric grains of Sb 2Te 3 on conductive glass to evaporate Sb 2Te 3 thin films by the electron beam evaporation method. Through experimental tests with different evaporation process parameters and film annealing conditions, thin films with better Seebeck coefficient, resistivity (ρ) and power fact (PF) can be obtained. Experimental results show that when thin films are annealed, their defects can be decreased accordingly, and carrier mobility can be enhanced to further elevate the conductivity of thin films. When the substrate temperature is set at 200 °C to fabricate Sb 2Te 3 thin films by the evaporation process and by annealing at 220 °C for 60 minutes, the Seebeck coefficient of Sb 2Te 3 thin films increase from 87.6 μV/K to 177.7 μV/K; resistivity falls from 6.21 mω-cm to 2.53 mω-cm and PF can achieve the maximum value of 1.24 10- 3 W/K 2 m. Finally, this study attempts to add indium (In) to Sb 2Te 3 thin films. Indium has been successfully fabricated In 3SbTe 2 thin films. This study also analyzes the effects of In on the thermoelectric properties of In 3SbTe 2 thin films.

Original languageEnglish
Pages (from-to)7491-7494
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number8
Publication statusPublished - 2011 Aug


  • Electron beam evaporation
  • Resistivity
  • Seebeck coefficient
  • ZT value

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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