Thermoelectric characteristics of annealed N-type BiTe thin film

H. H. Hsu*, C. H. Cheng, P. C. Chen, C. H. Yeh, Y. R. Chen, Y. W. Chou, Y. L. Lin, C. C. Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The thermoelectric n-type Bi-Te based thin films with and without oxygen annealing were investigated and the related thermoelectric properties were well defined and characterized in this study. We found that the Seebeck coefficient, electrical resistivity and power factor for thin-film BiTe were potentially comparable with those of bulk materials if an appropriate annealed treatment could be realized. In addition, the formation of TeO with higher resistivity in thin-film BiTe might bring out the contribution on the enhanced Seebeck coefficient, which showed the potential to the application of thin-film thermoelectric device.

Original languageEnglish
Title of host publicationSolid State Topics (General) - 220th ECS Meeting
Number of pages10
Publication statusPublished - 2012
Externally publishedYes
EventSolid State Topics General Session - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


OtherSolid State Topics General Session - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Engineering


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