Thermal reactions on the Cl-terminated SiGe(1 0 0) surface

Meng Wen Wu; Shiang Yuan Pan; Wei Hsiu Hung; Deng Sung Lin

doi:10.1016/S0039-6028(02)01261-X

Thermal reactions on the Cl-terminated SiGe(1 0 0) surface

Meng Wen Wu, Shiang Yuan Pan, Wei Hsiu Hung, Deng Sung Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Synchrotron radiation photoemission spectroscopy was used to investigate thermal reactions on the Cl-terminated SiGe(1 0 0)-2 × 1 surface. Populations of GeCl and SiCl surface species during thermal annealing are monitored by measuring the intensities of their corresponding Ge 3d, Si 2p and Cl 2p core level components. Experimental results indicate that the initially clean SiGe alloy surface is dominated by Ge-Ge and Ge-Si dimers, and that, after Cl₂ adsorption, thermodynamic forces drive Si in the subsurface region to replace Ge in the GeCl species. Consequently, chlorine desorbs in the form of SiCl₂ above ∼700 K, leading to etching of Si.

Original language	English
Pages (from-to)	295-299
Number of pages	5
Journal	Surface Science
Volume	507-510
DOIs	https://doi.org/10.1016/S0039-6028(02)01261-X
Publication status	Published - 2002 Jun
Externally published	Yes

Keywords

Chlorine
Germanium
Photoemission (total yield)
Silicon
Thermal desorption

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(02)01261-X

Cite this

@article{4668f9954438424896471635d21d1aad,

title = "Thermal reactions on the Cl-terminated SiGe(1 0 0) surface",

abstract = "Synchrotron radiation photoemission spectroscopy was used to investigate thermal reactions on the Cl-terminated SiGe(1 0 0)-2 × 1 surface. Populations of GeCl and SiCl surface species during thermal annealing are monitored by measuring the intensities of their corresponding Ge 3d, Si 2p and Cl 2p core level components. Experimental results indicate that the initially clean SiGe alloy surface is dominated by Ge-Ge and Ge-Si dimers, and that, after Cl2 adsorption, thermodynamic forces drive Si in the subsurface region to replace Ge in the GeCl species. Consequently, chlorine desorbs in the form of SiCl2 above ∼700 K, leading to etching of Si.",

keywords = "Chlorine, Germanium, Photoemission (total yield), Silicon, Thermal desorption",

author = "Wu, {Meng Wen} and Pan, {Shiang Yuan} and Hung, {Wei Hsiu} and Lin, {Deng Sung}",

note = "Funding Information: The authors wish to thank Y.W. Yang and L.J. Lai for assistance in using the wide range SGM beamline and the National Science Council, Taiwan for financially supporting this work under contract nos. NSC 90-2112-M009-016.",

year = "2002",

month = jun,

doi = "10.1016/S0039-6028(02)01261-X",

language = "English",

volume = "507-510",

pages = "295--299",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Thermal reactions on the Cl-terminated SiGe(1 0 0) surface

AU - Wu, Meng Wen

AU - Pan, Shiang Yuan

AU - Hung, Wei Hsiu

AU - Lin, Deng Sung

N1 - Funding Information: The authors wish to thank Y.W. Yang and L.J. Lai for assistance in using the wide range SGM beamline and the National Science Council, Taiwan for financially supporting this work under contract nos. NSC 90-2112-M009-016.

PY - 2002/6

Y1 - 2002/6

N2 - Synchrotron radiation photoemission spectroscopy was used to investigate thermal reactions on the Cl-terminated SiGe(1 0 0)-2 × 1 surface. Populations of GeCl and SiCl surface species during thermal annealing are monitored by measuring the intensities of their corresponding Ge 3d, Si 2p and Cl 2p core level components. Experimental results indicate that the initially clean SiGe alloy surface is dominated by Ge-Ge and Ge-Si dimers, and that, after Cl2 adsorption, thermodynamic forces drive Si in the subsurface region to replace Ge in the GeCl species. Consequently, chlorine desorbs in the form of SiCl2 above ∼700 K, leading to etching of Si.

AB - Synchrotron radiation photoemission spectroscopy was used to investigate thermal reactions on the Cl-terminated SiGe(1 0 0)-2 × 1 surface. Populations of GeCl and SiCl surface species during thermal annealing are monitored by measuring the intensities of their corresponding Ge 3d, Si 2p and Cl 2p core level components. Experimental results indicate that the initially clean SiGe alloy surface is dominated by Ge-Ge and Ge-Si dimers, and that, after Cl2 adsorption, thermodynamic forces drive Si in the subsurface region to replace Ge in the GeCl species. Consequently, chlorine desorbs in the form of SiCl2 above ∼700 K, leading to etching of Si.

KW - Chlorine

KW - Germanium

KW - Photoemission (total yield)

KW - Silicon

KW - Thermal desorption

UR - http://www.scopus.com/inward/record.url?scp=17944394243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17944394243&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(02)01261-X

DO - 10.1016/S0039-6028(02)01261-X

M3 - Article

AN - SCOPUS:17944394243

SN - 0039-6028

VL - 507-510

SP - 295

EP - 299

JO - Surface Science

JF - Surface Science

ER -

Thermal reactions on the Cl-terminated SiGe(1 0 0) surface

Abstract

Keywords

ASJC Scopus subject areas

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