Thermal evolution of Co islands on Ag/Si(111)- √3 × √3 and Ag/Ge(111)- √3 × √3 surfaces

Sung Lin Tsay, Chang Yu Kuo, Chun Liang Lin, Wen Chen Chen, Tsu Yi Fu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Thermal evolution of Co islands on Ag/Ge(1111) √3 × 3 and Ag/Si(111)- √ 3 × √3 surfaces was studied by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Ag-√3 × √3 buffer layer can avoid alloy formation of Co and Si or Ge below the annealing temperature 500 °C. The growth behavior of Co on Ag/Si(111)√3 × √3 surfaces is very different from that on Ag/Ge(111)-√3 × √3 surfaces, although both the √3 structures can be classified as honeycomb chain trimer (HCT) model. Submonolayer Co on Ag/Si(111)-√3 × √3 surfaces prefer to form clusters below 500 °C. However, Co clusters nucleate and construct two-dimensional islands (2D islands) on Ag/Ge(111)-√3 × √3 surfaces after annealing to 300 °C. The result of different growth behavior comes from two major factors. One is antiphase boundaries (APBs) with extra electron states, which trap Co clusters on Ag/Si(111)-√3 × √3 surfaces. The other is the strong binding force that exists between Ge and Co atoms to cause the formation of Co period islands on Ag/Ge(111)-√3 × √3 surfaces.

Original languageEnglish
Pages (from-to)1641-1645
Number of pages5
JournalSurface and Interface Analysis
Issue number13
Publication statusPublished - 2008 Dec


  • Cobalt
  • Germanium
  • Scanning tunneling microscopy
  • Silicon
  • Silver

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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