Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Y. T. Liu; M. H. Lee; H. T. Chen; C. F. Huang; C. Y. Peng; L. S. Lee; M. J. Kao

doi:10.1109/ICSICT.2008.4734764

Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Y. T. Liu^*
, M. H. Lee
, H. T. Chen
, C. F. Huang
, C. Y. Peng
, L. S. Lee
, M. J. Kao

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1^st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	1207-1210
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734764
Publication status	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	2008/10/20 → 2008/10/23

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSICT.2008.4734764

Cite this

Liu, Y. T., Lee, M. H., Chen, H. T., Huang, C. F., Peng, C. Y., Lee, L. S., & Kao, M. J. (2008). Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1207-1210). Article 4734764 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734764

Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits. / Liu, Y. T.; Lee, M. H.; Chen, H. T. et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1207-1210 4734764 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, YT, Lee, MH, Chen, HT, Huang, CF, Peng, CY, Lee, LS & Kao, MJ 2008, Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734764, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 1207-1210, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 2008/10/20. https://doi.org/10.1109/ICSICT.2008.4734764

Liu YT, Lee MH, Chen HT, Huang CF, Peng CY, Lee LS et al. Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1207-1210. 4734764. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734764

Liu, Y. T. ; Lee, M. H. ; Chen, H. T. et al. / Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 1207-1210 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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title = "Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits",

abstract = "The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.",

author = "Liu, \{Y. T.\} and Lee, \{M. H.\} and Chen, \{H. T.\} and Huang, \{C. F.\} and Peng, \{C. Y.\} and Lee, \{L. S.\} and Kao, \{M. J.\}",

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AB - The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.

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ER -

Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

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