TY - GEN
T1 - Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits
AU - Liu, Y. T.
AU - Lee, M. H.
AU - Chen, H. T.
AU - Huang, C. F.
AU - Peng, C. Y.
AU - Lee, L. S.
AU - Kao, M. J.
PY - 2008
Y1 - 2008
N2 - The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.
AB - The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.
UR - http://www.scopus.com/inward/record.url?scp=60649084806&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60649084806&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734764
DO - 10.1109/ICSICT.2008.4734764
M3 - Conference contribution
AN - SCOPUS:60649084806
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 1207
EP - 1210
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -