Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Y. T. Liu, Min-Hung Lee, H. T. Chen, C. F. Huang, C. Y. Peng, L. S. Lee, M. J. Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1207-1210
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits'. Together they form a unique fingerprint.

Cite this