Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Y. T. Liu, Min-Hung Lee, H. T. Chen, C. F. Huang, C. Y. Peng, L. S. Lee, M. J. Kao

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.

    Original languageEnglish
    Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
    Pages1207-1210
    Number of pages4
    DOIs
    Publication statusPublished - 2008 Dec 1
    Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
    Duration: 2008 Oct 202008 Oct 23

    Publication series

    NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

    Other

    Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
    CountryChina
    CityBeijing
    Period2008/10/202008/10/23

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

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