Theoretical study of time-resolved Raman scattering profiles of hot electrons in semiconductors

C. Chia, Otto F. Sankey, K. T. Tsen

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A comprehensive time-resolved electronic Raman scattering theory for nonequilibrium carrier excitations in semiconductors is presented. The following are simultaneously taken into account: (i) the effects of the ultrashort laser pulse for probing the excited carrier distribution function; (ii) the fact that the fluctuation-dissipation theorem is not valid under conditions of nonequilibrium carrier distributions; (iii) the effects of quasiparticle life time via a finite collision time in the Raman scattering cross section; and (iv) the effect of the time-dependent resonant enhancement factor due to the band structure. The single-particle scattering spectra for spin-density fluctuation contribution is found to be significantly broadened by an ultrashort laser pulse, but is substantially narrowed by the finite collision time. The effect of the time-dependent resonant enhancement factor has been demonstrated to broaden the line shape of single-particle scattering spectra for the spin-density fluctuation contribution as the probe photon energy increases.

Original languageEnglish
Pages (from-to)4325-4335
Number of pages11
JournalJournal of Applied Physics
Volume72
Issue number9
DOIs
Publication statusPublished - 1992 Dec 1

Fingerprint

hot electrons
Raman spectra
profiles
collisions
augmentation
pulses
scattering
scattering cross sections
lasers
line shape
dissipation
theorems
distribution functions
life (durability)
probes
photons
electronics
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Theoretical study of time-resolved Raman scattering profiles of hot electrons in semiconductors. / Chia, C.; Sankey, Otto F.; Tsen, K. T.

In: Journal of Applied Physics, Vol. 72, No. 9, 01.12.1992, p. 4325-4335.

Research output: Contribution to journalArticle

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