Theoretical study of time-resolved Raman scattering profiles of hot electrons in semiconductors

C. Chia, Otto F. Sankey, K. T. Tsen

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A comprehensive time-resolved electronic Raman scattering theory for nonequilibrium carrier excitations in semiconductors is presented. The following are simultaneously taken into account: (i) the effects of the ultrashort laser pulse for probing the excited carrier distribution function; (ii) the fact that the fluctuation-dissipation theorem is not valid under conditions of nonequilibrium carrier distributions; (iii) the effects of quasiparticle life time via a finite collision time in the Raman scattering cross section; and (iv) the effect of the time-dependent resonant enhancement factor due to the band structure. The single-particle scattering spectra for spin-density fluctuation contribution is found to be significantly broadened by an ultrashort laser pulse, but is substantially narrowed by the finite collision time. The effect of the time-dependent resonant enhancement factor has been demonstrated to broaden the line shape of single-particle scattering spectra for the spin-density fluctuation contribution as the probe photon energy increases.

Original languageEnglish
Pages (from-to)4325-4335
Number of pages11
JournalJournal of Applied Physics
Volume72
Issue number9
DOIs
Publication statusPublished - 1992 Dec 1

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this