The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu; S. T. Chang; R. S. Syu; K. W. Shen; M. H. Lee

doi:10.1109/EDSSC.2007.4450177

The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu^*, S. T. Chang, R. S. Syu, K. W. Shen, M. H. Lee

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si₃N₄, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	523-526
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450177
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	2007/12/20 → 2007/12/22

Keywords

A-Si:H TFT
Stress
Thermal conduction layers
Thermal conductivity

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450177

Cite this

Liu, Y. T., Chang, S. T., Syu, R. S., Shen, K. W., & Lee, M. H. (2007). The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 523-526). Article 4450177 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450177

The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. / Liu, Y. T.; Chang, S. T.; Syu, R. S. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 523-526 4450177 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, YT, Chang, ST, Syu, RS, Shen, KW & Lee, MH 2007, The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450177, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 523-526, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 2007/12/20. https://doi.org/10.1109/EDSSC.2007.4450177

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title = "The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application",

abstract = "We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.",

keywords = "A-Si:H TFT, Stress, Thermal conduction layers, Thermal conductivity",

author = "Liu, {Y. T.} and Chang, {S. T.} and Syu, {R. S.} and Shen, {K. W.} and Lee, {M. H.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450177",

language = "English",

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series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

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note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

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AU - Lee, M. H.

PY - 2007

Y1 - 2007

N2 - We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

AB - We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

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KW - Stress

KW - Thermal conduction layers

KW - Thermal conductivity

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BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Abstract

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Keywords

ASJC Scopus subject areas

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