The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu, S. T. Chang, R. S. Syu, K. W. Shen, M. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages523-526
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07/12/2007/12/22

Keywords

  • A-Si:H TFT
  • Stress
  • Thermal conduction layers
  • Thermal conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Liu, Y. T., Chang, S. T., Syu, R. S., Shen, K. W., & Lee, M. H. (2007). The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 523-526). [4450177] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450177