The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu, S. T. Chang, R. S. Syu, K. W. Shen, M. H. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

    Original languageEnglish
    Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
    Pages523-526
    Number of pages4
    DOIs
    Publication statusPublished - 2007 Dec 1
    EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
    Duration: 2007 Dec 202007 Dec 22

    Publication series

    NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

    Other

    OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
    Country/TerritoryTaiwan
    CityTainan
    Period2007/12/202007/12/22

    Keywords

    • A-Si:H TFT
    • Stress
    • Thermal conduction layers
    • Thermal conductivity

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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