Abstract
Spherical gallium arsenic nanoparticles prepared by thermal evaporation method have been fabricated successfully. The structural and optical properties of GaAs nanoparticles are studied in detail. It is found that while the growth pressure rises from 0.4 to 5 Torr, the average size of GaAs nanoparticles increases from 6 to 12 nm and standard deviation keeps almost the same (∼2 nm) except for 0.5 Torr. By using transmission electron microscopy and Raman spectra, a critical preparation condition has been found which characterize the amorphous to crystal transition of GaAs nanoparticles.
Original language | English |
---|---|
Pages (from-to) | 415-419 |
Number of pages | 5 |
Journal | Journal of Nanoparticle Research |
Volume | 6 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2004 Aug |
Keywords
- GaAs
- Nanoparticle
- Structural properties
- Thermal evaporation
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Atomic and Molecular Physics, and Optics
- Modelling and Simulation
- General Materials Science
- Condensed Matter Physics