The simulation analysis of MOSFET channel stress for different oxide/nitride/oxide (ONO) spacer thicknesses

J. Y. Chen, Z. H. Chen, K. C. Lin, Ming-Jenq Twu, Y. H. Hung, P. Y. Chou, G. T. Chen, Y. S. Liu, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science