The simulation analysis of MOSFET channel stress for different oxide/nitride/oxide (ONO) spacer thicknesses

J. Y. Chen, Z. H. Chen, K. C. Lin, Ming-Jenq Twu, Y. H. Hung, P. Y. Chou, G. T. Chen, Y. S. Liu, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is demonstrated that the strained-Si can enhance the channel stress with the contact etching stop layer (CESL) stressor. In addition to CESL, this article also includes ONO spacer and investigates the impact of ONO spacer thickness on the channel stress. It is found that the channel stress increases when the nitride thickness of the ONO spacer increases. On the other hand, the stress distribution is simulated and analyzed for the devices with or without CESL stressor. Generally speaking, based on the simulation results, the channel stress of MOSFET devices increases when the nitride stressor of ONO spacer and/or CESL increases.

Original languageEnglish
Title of host publicationMaterials Science and Chemical Engineering
Pages436-439
Number of pages4
DOIs
Publication statusPublished - 2013 Jul 8
Event2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore
Duration: 2013 Feb 202013 Feb 21

Publication series

NameAdvanced Materials Research
Volume699
ISSN (Print)1022-6680

Other

Other2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
CountrySingapore
Period13/2/2013/2/21

Keywords

  • CESL (contact etch stop layer)
  • Channel stress
  • MOSFET
  • Spacer

ASJC Scopus subject areas

  • Engineering(all)

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