INIS
emission
100%
silicon oxides
100%
oxides
100%
metals
100%
light emitting diodes
100%
roughness
100%
high vacuum
100%
growth
33%
accumulation
33%
scattering
33%
increasing
16%
surfaces
16%
interfaces
16%
temperature range 0273-0400 k
16%
oxidation
16%
electrons
16%
electrodes
16%
holes
16%
phonons
16%
electroluminescence
16%
atomic force microscopy
16%
tunnel diodes
16%
silicon diodes
16%
quantum efficiency
16%
Chemistry
Roughness
100%
Metal Oxide
100%
Vacuum
100%
Silicon
100%
Oxide
80%
Scattering
40%
Surface
20%
Ambient Reaction Temperature
20%
Electron Particle
20%
Oxidation Reaction
20%
Phonon
20%
Tunneling
20%
Atomic Force Microscopy
20%
Electroluminescence
20%
Momentum
20%
Engineering
Roughness
100%
Light-Emitting Diode
100%
Light Emission
100%
High Vacuum
100%
Scattering
40%
Surfaces
20%
Room Temperature
20%
Tunneling
20%
Tunnels
20%
Emission Intensity
20%
Gate Bias
20%
Thermal Oxidation
20%
Gate Electrode
20%
External Quantum Efficiency
20%
Growth Condition
20%
Material Science
Oxide
100%
Light-Emitting Diode
100%
Metal Oxide
100%
Diode
50%
Surface
25%
Temperature
25%
Electrode
25%
Electroluminescence
25%
Atomic Force Microscopy
25%
Oxide Interface
25%
Oxidation Reaction
25%
Earth and Planetary Sciences
High Vacuum
100%
Light Emission
100%
Luminaires
20%