The role of oxygen vacancies on switching characteristics of TiOx resistive memories

Z. W. Zheng; H. H. Hsu; P. C. Chen; C. H. Cheng

doi:10.1166/jnn.2015.9763

The role of oxygen vacancies on switching characteristics of TiO_x resistive memories

Z. W. Zheng, H. H. Hsu, P. C. Chen, C. H. Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Using oxygen vacancy rich (VO-rich) TiO_x dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the Ni/VO-rich TiO_x/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiO_x after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.

Original language	English
Pages (from-to)	4431-4434
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	6
DOIs	https://doi.org/10.1166/jnn.2015.9763
Publication status	Published - 2015 Jun 1

Keywords

Filament
Resistive Random Access Memory (RRAM)
TiO
Work function

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

Access to Document

10.1166/jnn.2015.9763

Cite this

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title = "The role of oxygen vacancies on switching characteristics of TiOx resistive memories",

abstract = "Using oxygen vacancy rich (VO-rich) TiOx dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the Ni/VO-rich TiOx/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiOx after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.",

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AU - Zheng, Z. W.

AU - Hsu, H. H.

AU - Chen, P. C.

AU - Cheng, C. H.

PY - 2015/6/1

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AB - Using oxygen vacancy rich (VO-rich) TiOx dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the Ni/VO-rich TiOx/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiOx after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.

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