The role of oxygen vacancies on switching characteristics of TiOx resistive memories

Z. W. Zheng, H. H. Hsu, P. C. Chen, C. H. Cheng

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using oxygen vacancy rich (VO-rich) TiOx dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the Ni/VO-rich TiOx/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiOx after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.

Original languageEnglish
Pages (from-to)4431-4434
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Fingerprint

Oxygen vacancies
Electrodes
current distribution
Oxygen
Data storage equipment
Equipment and Supplies
electrodes
oxygen
Annealing
annealing
random access memory
Rupture
filaments
interstitials
conduction
Defects
causes
defects

Keywords

  • Filament
  • Resistive Random Access Memory (RRAM)
  • TiO
  • Work function

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The role of oxygen vacancies on switching characteristics of TiOx resistive memories. / Zheng, Z. W.; Hsu, H. H.; Chen, P. C.; Cheng, C. H.

In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 6, 01.06.2015, p. 4431-4434.

Research output: Contribution to journalArticle

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