The role of carbon on performance of strained-Si:C surface channel NMOSFETs

M. H. Lee*, S. T. Chang, S. Maikap, C. F. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the ∼52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a ∼40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large Dit at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement.

Original languageEnglish
Pages (from-to)1569-1572
Number of pages4
JournalSolid-State Electronics
Issue number10
Publication statusPublished - 2008 Oct


  • Alloy scattering
  • Carbon incorporation
  • Sheet resistance
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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