The role of carbon on performance of strained-Si:C surface channel NMOSFETs

Min-Hung Lee, S. T. Chang, S. Maikap, C. F. Huang

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the ∼52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a ∼40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large Dit at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement.

    Original languageEnglish
    Pages (from-to)1569-1572
    Number of pages4
    JournalSolid-State Electronics
    Volume52
    Issue number10
    DOIs
    Publication statusPublished - 2008 Oct 1

    Fingerprint

    Carbon
    Carrier mobility
    carbon
    carrier mobility
    Lattice mismatch
    Electron mobility
    Silicon
    Oxides
    augmentation
    electron mobility
    Scattering
    oxides
    silicon
    predictions
    scattering

    Keywords

    • Alloy scattering
    • Carbon incorporation
    • Sheet resistance
    • Strain

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    The role of carbon on performance of strained-Si:C surface channel NMOSFETs. / Lee, Min-Hung; Chang, S. T.; Maikap, S.; Huang, C. F.

    In: Solid-State Electronics, Vol. 52, No. 10, 01.10.2008, p. 1569-1572.

    Research output: Contribution to journalArticle

    Lee, Min-Hung ; Chang, S. T. ; Maikap, S. ; Huang, C. F. / The role of carbon on performance of strained-Si:C surface channel NMOSFETs. In: Solid-State Electronics. 2008 ; Vol. 52, No. 10. pp. 1569-1572.
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