The role of carbon on performance of strained-Si:C surface channel NMOSFETs

M. H. Lee, S. T. Chang, S. Maikap, C. F. Huang

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the ∼52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a ∼40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large Dit at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement.

    Original languageEnglish
    Pages (from-to)1569-1572
    Number of pages4
    JournalSolid-State Electronics
    Issue number10
    Publication statusPublished - 2008 Oct 1


    • Alloy scattering
    • Carbon incorporation
    • Sheet resistance
    • Strain

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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