The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

Tsu Yi Fu, Jia Yuan Wu, Ming Kuan Jhou, Hung Chan Hsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2×8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(3×3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2×8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

Original languageEnglish
Article number17B724
JournalJournal of Applied Physics
Volume117
Issue number17
DOIs
Publication statusPublished - 2015 May 7

Fingerprint

buffers
iron
annealing
atoms
defects
microscopes
silver
scanning
room temperature
temperature
germanium
strip
diffusion coefficient
phase diagrams
causes
rings
symmetry
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces. / Fu, Tsu Yi; Wu, Jia Yuan; Jhou, Ming Kuan; Hsu, Hung Chan.

In: Journal of Applied Physics, Vol. 117, No. 17, 17B724, 07.05.2015.

Research output: Contribution to journalArticle

Fu, Tsu Yi ; Wu, Jia Yuan ; Jhou, Ming Kuan ; Hsu, Hung Chan. / The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces. In: Journal of Applied Physics. 2015 ; Vol. 117, No. 17.
@article{a52eb4308d164a78af7989cdaee79cd4,
title = "The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces",
abstract = "Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2×8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(3×3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2×8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.",
author = "Fu, {Tsu Yi} and Wu, {Jia Yuan} and Jhou, {Ming Kuan} and Hsu, {Hung Chan}",
year = "2015",
month = "5",
day = "7",
doi = "10.1063/1.4916303",
language = "English",
volume = "117",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

AU - Fu, Tsu Yi

AU - Wu, Jia Yuan

AU - Jhou, Ming Kuan

AU - Hsu, Hung Chan

PY - 2015/5/7

Y1 - 2015/5/7

N2 - Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2×8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(3×3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2×8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

AB - Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2×8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(3×3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2×8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=84961352713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961352713&partnerID=8YFLogxK

U2 - 10.1063/1.4916303

DO - 10.1063/1.4916303

M3 - Article

AN - SCOPUS:84961352713

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 17B724

ER -