The reliability study and device modeling for p-HEMT microwave power transistors

S. L. Liu, H. M. Chang, T. Chang, H. L. Kao, Chun-Hu Cheng, A. Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the deembedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages175-187
Number of pages13
Edition6
DOIs
Publication statusPublished - 2011 Dec 1
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

Fingerprint

High electron mobility transistors
Microwaves
Electric potential
Two dimensional electron gas
Drain current
Temperature
Degradation
Power transistors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Liu, S. L., Chang, H. M., Chang, T., Kao, H. L., Cheng, C-H., & Chin, A. (2011). The reliability study and device modeling for p-HEMT microwave power transistors. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 175-187). (ECS Transactions; Vol. 41, No. 6). https://doi.org/10.1149/1.3629965

The reliability study and device modeling for p-HEMT microwave power transistors. / Liu, S. L.; Chang, H. M.; Chang, T.; Kao, H. L.; Cheng, Chun-Hu; Chin, A.

State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. 2011. p. 175-187 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, SL, Chang, HM, Chang, T, Kao, HL, Cheng, C-H & Chin, A 2011, The reliability study and device modeling for p-HEMT microwave power transistors. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, pp. 175-187, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3629965
Liu SL, Chang HM, Chang T, Kao HL, Cheng C-H, Chin A. The reliability study and device modeling for p-HEMT microwave power transistors. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 ed. 2011. p. 175-187. (ECS Transactions; 6). https://doi.org/10.1149/1.3629965
Liu, S. L. ; Chang, H. M. ; Chang, T. ; Kao, H. L. ; Cheng, Chun-Hu ; Chin, A. / The reliability study and device modeling for p-HEMT microwave power transistors. State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. 2011. pp. 175-187 (ECS Transactions; 6).
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