The preparation and characterization of RuTe2 single crystals

Jeng Kuang Huang; Ying Sheng Huang; Tzuen Rong Yang

doi:10.1016/0022-0248(94)90744-7

The preparation and characterization of RuTe₂ single crystals

Jeng Kuang Huang, Ying Sheng Huang, Tzuen Rong Yang

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Large size single crystals of RuTe₂ were prepared by the chemical transport method with ICl₃ as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe₂ is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.

Original language	English
Pages (from-to)	224-228
Number of pages	5
Journal	Journal of Crystal Growth
Volume	135
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(94)90744-7
Publication status	Published - 1994 Jan

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "The preparation and characterization of RuTe2 single crystals",

abstract = "Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.",

author = "Huang, {Jeng Kuang} and Huang, {Ying Sheng} and Yang, {Tzuen Rong}",

year = "1994",

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N2 - Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.

AB - Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.

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