Abstract
Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 224-228 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 135 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1994 Jan |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
The preparation and characterization of RuTe2 single crystals. / Huang, Jeng Kuang; Huang, Ying Sheng; Yang, Tzuen Rong.
In: Journal of Crystal Growth, Vol. 135, No. 1-2, 01.1994, p. 224-228.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The preparation and characterization of RuTe2 single crystals
AU - Huang, Jeng Kuang
AU - Huang, Ying Sheng
AU - Yang, Tzuen Rong
PY - 1994/1
Y1 - 1994/1
N2 - Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
AB - Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
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UR - http://www.scopus.com/inward/citedby.url?scp=0028192016&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90744-7
DO - 10.1016/0022-0248(94)90744-7
M3 - Article
AN - SCOPUS:0028192016
VL - 135
SP - 224
EP - 228
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -