TY - JOUR
T1 - The preparation and characterization of RuTe2 single crystals
AU - Huang, Jeng Kuang
AU - Huang, Ying Sheng
AU - Yang, Tzuen Rong
N1 - Funding Information:
The authors acknowledge the support of the National Science Council of the Republic of China.
PY - 1994/1
Y1 - 1994/1
N2 - Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
AB - Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
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U2 - 10.1016/0022-0248(94)90744-7
DO - 10.1016/0022-0248(94)90744-7
M3 - Article
AN - SCOPUS:0028192016
VL - 135
SP - 224
EP - 228
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -