The preparation and characterization of RuTe2 single crystals

Jeng Kuang Huang; Ying Sheng Huang; Tzuen Rong Yang

doi:10.1016/0022-0248(94)90744-7

The preparation and characterization of RuTe₂ single crystals

Jeng Kuang Huang, Ying Sheng Huang, Tzuen Rong Yang

Department of Physics

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Large size single crystals of RuTe₂ were prepared by the chemical transport method with ICl₃ as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe₂ is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.

Original language	English
Pages (from-to)	224-228
Number of pages	5
Journal	Journal of Crystal Growth
Volume	135
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(94)90744-7
Publication status	Published - 1994 Jan

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ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Huang, J. K., Huang, Y. S., & Yang, T. R. (1994). The preparation and characterization of RuTe₂ single crystals. Journal of Crystal Growth, 135(1-2), 224-228. https://doi.org/10.1016/0022-0248(94)90744-7

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10.1016/0022-0248(94)90744-7