The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO2 high-k metal gate 28nm CMOS devices

P. C. Wu, E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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Engineering & Materials Science