The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO2 high-k metal gate 28nm CMOS devices

P. C. Wu; E. R. Hsieh; P. Y. Lu; Steve S. Chung; K. Y. Chang; C. H. Liu; J. C. Ke; C. W. Yang; C. T. Tsai

doi:10.1109/VLSI-TSA.2014.6839679

The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO₂ high-k metal gate 28nm CMOS devices

P. C. Wu, E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A comprehensive analysis on the BTI induced RTN traps in high-k(HK) CMOS devices have been investigated in inversion (inv.) and accumulation (acc.) modes. The combination of two modes for RTN measurement provides a wide range of energy window in high-k gate dielectric, in which a simple extraction method of RTN analysis has been adopted to analyze the gate dielectric dual-layer of advanced HK devices. The results show that inversion mode measurement can only identify the RTN traps in the channel region, which is related to the V _th degradation. While, accumulation mode may detect the traps inside the gate-drain overlap region which provides better understanding of GIDL current. This basic understanding is of critical important to the quality development of HK gate dielectrics in advanced CMOS technologies.

Original language	English
Title of host publication	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479922178
DOIs	https://doi.org/10.1109/VLSI-TSA.2014.6839679
Publication status	Published - 2014
Event	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan Duration: 2014 Apr 28 → 2014 Apr 30

Publication series

Name	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Other

Other	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Country/Territory	Taiwan
City	Hsinchu
Period	2014/04/28 → 2014/04/30

ASJC Scopus subject areas

Hardware and Architecture
Computer Science Applications

Access to Document

10.1109/VLSI-TSA.2014.6839679

Cite this

Wu, P. C., Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W., & Tsai, C. T. (2014). The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO₂ high-k metal gate 28nm CMOS devices. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 Article 6839679 (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839679

The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO₂ high-k metal gate 28nm CMOS devices. / Wu, P. C.; Hsieh, E. R.; Lu, P. Y. et al.
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. 6839679 (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, PC, Hsieh, ER, Lu, PY, Chung, SS, Chang, KY, Liu, CH, Ke, JC, Yang, CW & Tsai, CT 2014, The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO₂ high-k metal gate 28nm CMOS devices. in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014., 6839679, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, IEEE Computer Society, 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, Hsinchu, Taiwan, 2014/04/28. https://doi.org/10.1109/VLSI-TSA.2014.6839679

Wu PC, Hsieh ER, Lu PY, Chung SS, Chang KY, Liu CH et al. The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO₂ high-k metal gate 28nm CMOS devices. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society. 2014. 6839679. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). doi: 10.1109/VLSI-TSA.2014.6839679

Wu, P. C. ; Hsieh, E. R. ; Lu, P. Y. et al. / The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO₂ high-k metal gate 28nm CMOS devices. Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

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abstract = "A comprehensive analysis on the BTI induced RTN traps in high-k(HK) CMOS devices have been investigated in inversion (inv.) and accumulation (acc.) modes. The combination of two modes for RTN measurement provides a wide range of energy window in high-k gate dielectric, in which a simple extraction method of RTN analysis has been adopted to analyze the gate dielectric dual-layer of advanced HK devices. The results show that inversion mode measurement can only identify the RTN traps in the channel region, which is related to the V th degradation. While, accumulation mode may detect the traps inside the gate-drain overlap region which provides better understanding of GIDL current. This basic understanding is of critical important to the quality development of HK gate dielectrics in advanced CMOS technologies.",

author = "Wu, {P. C.} and Hsieh, {E. R.} and Lu, {P. Y.} and Chung, {Steve S.} and Chang, {K. Y.} and Liu, {C. H.} and Ke, {J. C.} and Yang, {C. W.} and Tsai, {C. T.}",

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