The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO 2 high-k metal gate 28nm CMOS devices

P. C. Wu, E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, Chuan-Hsi Liu, J. C. Ke, C. W. Yang, C. T. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A comprehensive analysis on the BTI induced RTN traps in high-k(HK) CMOS devices have been investigated in inversion (inv.) and accumulation (acc.) modes. The combination of two modes for RTN measurement provides a wide range of energy window in high-k gate dielectric, in which a simple extraction method of RTN analysis has been adopted to analyze the gate dielectric dual-layer of advanced HK devices. The results show that inversion mode measurement can only identify the RTN traps in the channel region, which is related to the V th degradation. While, accumulation mode may detect the traps inside the gate-drain overlap region which provides better understanding of GIDL current. This basic understanding is of critical important to the quality development of HK gate dielectrics in advanced CMOS technologies.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
Duration: 2014 Apr 282014 Apr 30

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Other

Other2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan
CityHsinchu
Period14/4/2814/4/30

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Science Applications

Fingerprint Dive into the research topics of 'The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO <sub>2</sub> high-k metal gate 28nm CMOS devices'. Together they form a unique fingerprint.

  • Cite this

    Wu, P. C., Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C-H., Ke, J. C., Yang, C. W., & Tsai, C. T. (2014). The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO 2 high-k metal gate 28nm CMOS devices In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839679] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839679