The Magnetic Reversal Study of Permalloy Microdomains

Y. W. Huang, C. K. Lo, Y. D. Yao, Jau Jiu Ju, Tzuan Ren Jeng, J. H. Huang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

For studying the influence of the current passed through a metal line for the magnetic cells on semiconductors, we prepared two types of the devices. Case 1 is that only one patterned permalloy cell on top of the insulated metal strip, and two cells are beside the strip. Case 2 is that all three patterned magnetic cells are on top of the strip. The magnetic field needed to reverse the magnetization of a submicrometer-size permalloy single domain cell with aspect ratio of 6 is larger than that of a unpatterned millimeter-size permalloy thin film due to the dimension effect. Magnetic force microscopy images of the patterned cells before and after applying various electrical currents were investigated. We have observed that: 1) the magnetic field produced by the word line will not change the magnetic configuration of the magnetic cells near the wires; 2) the magnetic field produced by the word line is quite uniform; and 3) for small aspect ratio of the submicrometer magnetic cells (<6), the magnetic configuration becomes multidomain, and higher magnetic field needed to reverse its magnetic state. Finally, we have shown a method that integrates an electric wire on semiconductors for generation of surrounding magnetic fields and patterned magnetic cells on micrometer length scales.

Original languageEnglish
Pages (from-to)3444-3446
Number of pages3
JournalIEEE Transactions on Magnetics
Volume39
Issue number5 II
DOIs
Publication statusPublished - 2003 Sep

Keywords

  • Electron beam (E-beam) lithography
  • Magnetic domain reversal
  • Magnetic domain structure
  • Magnetic force microscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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