The Magnetic Reversal Study of Permalloy Microdomains

Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, Jau Jiu Ju, Tzuan Ren Jeng, J. H. Huang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

For studying the influence of the current passed through a metal line for the magnetic cells on semiconductors, we prepared two types of the devices. Case 1 is that only one patterned permalloy cell on top of the insulated metal strip, and two cells are beside the strip. Case 2 is that all three patterned magnetic cells are on top of the strip. The magnetic field needed to reverse the magnetization of a submicrometer-size permalloy single domain cell with aspect ratio of 6 is larger than that of a unpatterned millimeter-size permalloy thin film due to the dimension effect. Magnetic force microscopy images of the patterned cells before and after applying various electrical currents were investigated. We have observed that: 1) the magnetic field produced by the word line will not change the magnetic configuration of the magnetic cells near the wires; 2) the magnetic field produced by the word line is quite uniform; and 3) for small aspect ratio of the submicrometer magnetic cells (<6), the magnetic configuration becomes multidomain, and higher magnetic field needed to reverse its magnetic state. Finally, we have shown a method that integrates an electric wire on semiconductors for generation of surrounding magnetic fields and patterned magnetic cells on micrometer length scales.

Original languageEnglish
Pages (from-to)3444-3446
Number of pages3
JournalIEEE Transactions on Magnetics
Volume39
Issue number5 II
DOIs
Publication statusPublished - 2003 Sep 1

Fingerprint

Magnetic fields
Aspect ratio
Electric wire
Semiconductor materials
Magnetic force microscopy
Strip metal
Magnetization
Metals
Wire
Thin films

Keywords

  • Electron beam (E-beam) lithography
  • Magnetic domain reversal
  • Magnetic domain structure
  • Magnetic force microscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Huang, Y. W., Lo, C-K., Yao, Y. D., Ju, J. J., Jeng, T. R., & Huang, J. H. (2003). The Magnetic Reversal Study of Permalloy Microdomains. IEEE Transactions on Magnetics, 39(5 II), 3444-3446. https://doi.org/10.1109/TMAG.2003.816177

The Magnetic Reversal Study of Permalloy Microdomains. / Huang, Y. W.; Lo, Chi-Kuen; Yao, Y. D.; Ju, Jau Jiu; Jeng, Tzuan Ren; Huang, J. H.

In: IEEE Transactions on Magnetics, Vol. 39, No. 5 II, 01.09.2003, p. 3444-3446.

Research output: Contribution to journalArticle

Huang, YW, Lo, C-K, Yao, YD, Ju, JJ, Jeng, TR & Huang, JH 2003, 'The Magnetic Reversal Study of Permalloy Microdomains', IEEE Transactions on Magnetics, vol. 39, no. 5 II, pp. 3444-3446. https://doi.org/10.1109/TMAG.2003.816177
Huang, Y. W. ; Lo, Chi-Kuen ; Yao, Y. D. ; Ju, Jau Jiu ; Jeng, Tzuan Ren ; Huang, J. H. / The Magnetic Reversal Study of Permalloy Microdomains. In: IEEE Transactions on Magnetics. 2003 ; Vol. 39, No. 5 II. pp. 3444-3446.
@article{96ff1c0ebccc40bd9f830d63e1552123,
title = "The Magnetic Reversal Study of Permalloy Microdomains",
abstract = "For studying the influence of the current passed through a metal line for the magnetic cells on semiconductors, we prepared two types of the devices. Case 1 is that only one patterned permalloy cell on top of the insulated metal strip, and two cells are beside the strip. Case 2 is that all three patterned magnetic cells are on top of the strip. The magnetic field needed to reverse the magnetization of a submicrometer-size permalloy single domain cell with aspect ratio of 6 is larger than that of a unpatterned millimeter-size permalloy thin film due to the dimension effect. Magnetic force microscopy images of the patterned cells before and after applying various electrical currents were investigated. We have observed that: 1) the magnetic field produced by the word line will not change the magnetic configuration of the magnetic cells near the wires; 2) the magnetic field produced by the word line is quite uniform; and 3) for small aspect ratio of the submicrometer magnetic cells (<6), the magnetic configuration becomes multidomain, and higher magnetic field needed to reverse its magnetic state. Finally, we have shown a method that integrates an electric wire on semiconductors for generation of surrounding magnetic fields and patterned magnetic cells on micrometer length scales.",
keywords = "Electron beam (E-beam) lithography, Magnetic domain reversal, Magnetic domain structure, Magnetic force microscope",
author = "Huang, {Y. W.} and Chi-Kuen Lo and Yao, {Y. D.} and Ju, {Jau Jiu} and Jeng, {Tzuan Ren} and Huang, {J. H.}",
year = "2003",
month = "9",
day = "1",
doi = "10.1109/TMAG.2003.816177",
language = "English",
volume = "39",
pages = "3444--3446",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5 II",

}

TY - JOUR

T1 - The Magnetic Reversal Study of Permalloy Microdomains

AU - Huang, Y. W.

AU - Lo, Chi-Kuen

AU - Yao, Y. D.

AU - Ju, Jau Jiu

AU - Jeng, Tzuan Ren

AU - Huang, J. H.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - For studying the influence of the current passed through a metal line for the magnetic cells on semiconductors, we prepared two types of the devices. Case 1 is that only one patterned permalloy cell on top of the insulated metal strip, and two cells are beside the strip. Case 2 is that all three patterned magnetic cells are on top of the strip. The magnetic field needed to reverse the magnetization of a submicrometer-size permalloy single domain cell with aspect ratio of 6 is larger than that of a unpatterned millimeter-size permalloy thin film due to the dimension effect. Magnetic force microscopy images of the patterned cells before and after applying various electrical currents were investigated. We have observed that: 1) the magnetic field produced by the word line will not change the magnetic configuration of the magnetic cells near the wires; 2) the magnetic field produced by the word line is quite uniform; and 3) for small aspect ratio of the submicrometer magnetic cells (<6), the magnetic configuration becomes multidomain, and higher magnetic field needed to reverse its magnetic state. Finally, we have shown a method that integrates an electric wire on semiconductors for generation of surrounding magnetic fields and patterned magnetic cells on micrometer length scales.

AB - For studying the influence of the current passed through a metal line for the magnetic cells on semiconductors, we prepared two types of the devices. Case 1 is that only one patterned permalloy cell on top of the insulated metal strip, and two cells are beside the strip. Case 2 is that all three patterned magnetic cells are on top of the strip. The magnetic field needed to reverse the magnetization of a submicrometer-size permalloy single domain cell with aspect ratio of 6 is larger than that of a unpatterned millimeter-size permalloy thin film due to the dimension effect. Magnetic force microscopy images of the patterned cells before and after applying various electrical currents were investigated. We have observed that: 1) the magnetic field produced by the word line will not change the magnetic configuration of the magnetic cells near the wires; 2) the magnetic field produced by the word line is quite uniform; and 3) for small aspect ratio of the submicrometer magnetic cells (<6), the magnetic configuration becomes multidomain, and higher magnetic field needed to reverse its magnetic state. Finally, we have shown a method that integrates an electric wire on semiconductors for generation of surrounding magnetic fields and patterned magnetic cells on micrometer length scales.

KW - Electron beam (E-beam) lithography

KW - Magnetic domain reversal

KW - Magnetic domain structure

KW - Magnetic force microscope

UR - http://www.scopus.com/inward/record.url?scp=0141952887&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141952887&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2003.816177

DO - 10.1109/TMAG.2003.816177

M3 - Article

VL - 39

SP - 3444

EP - 3446

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5 II

ER -