The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Min Hung Lee; Pin Guang Chen

doi:10.1186/1556-276X-7-307

The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Min Hung Lee^*, Pin Guang Chen

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.

Original language	English
Article number	307
Journal	Nanoscale Research Letters
Volume	7
DOIs	https://doi.org/10.1186/1556-276X-7-307
Publication status	Published - 2012

Keywords

Excimer laser
Re-crystallization
Self-assembled

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/1556-276X-7-307

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title = "The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing",

abstract = "Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.",

keywords = "Excimer laser, Re-crystallization, Self-assembled",

author = "Lee, {Min Hung} and Chen, {Pin Guang}",

note = "Funding Information: The authors are very grateful for the UHV-CVD support from Prof. C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, funding support by National Science Council, (NSC 98-2221-E-003-020-MY3, 101-2221-E-003-019), and National Taiwan Normal University (NTNU100-D-01), and experimental support by Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Taiwan.",

year = "2012",

doi = "10.1186/1556-276X-7-307",

language = "English",

volume = "7",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

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TY - JOUR

T1 - The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

AU - Lee, Min Hung

AU - Chen, Pin Guang

N1 - Funding Information: The authors are very grateful for the UHV-CVD support from Prof. C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, funding support by National Science Council, (NSC 98-2221-E-003-020-MY3, 101-2221-E-003-019), and National Taiwan Normal University (NTNU100-D-01), and experimental support by Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Taiwan.

PY - 2012

Y1 - 2012

N2 - Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.

AB - Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.

KW - Excimer laser

KW - Re-crystallization

KW - Self-assembled

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DO - 10.1186/1556-276X-7-307

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JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

M1 - 307

ER -

The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Abstract

Keywords

ASJC Scopus subject areas

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