The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Min Hung Lee, Pin Guang Chen

Research output: Contribution to journalArticle


Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.

Original languageEnglish
Article number307
JournalNanoscale Research Letters
Publication statusPublished - 2012 Jan 1



  • Excimer laser
  • Re-crystallization
  • Self-assembled

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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