The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Min Hung Lee, Pin Guang Chen

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.

    Original languageEnglish
    Article number307
    JournalNanoscale Research Letters
    Volume7
    DOIs
    Publication statusPublished - 2012

    Keywords

    • Excimer laser
    • Re-crystallization
    • Self-assembled

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

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