The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

M. H. Lee; S. T. Chang; S. Maikap; C. Y. Yu; C. W. Liu

The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs

M. H. Lee^*, S. T. Chang, S. Maikap, C. Y. Yu, C. W. Liu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication status	Published - 2006
Externally published	Yes
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	2006/05/15 → 2006/05/17

ASJC Scopus subject areas

General Computer Science
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Lee, M. H., Chang, S. T., Maikap, S., Yu, C. Y., & Liu, C. W. (2006). The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest Article 1715972 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs. / Lee, M. H.; Chang, S. T.; Maikap, S. et al.
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715972 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chang, ST, Maikap, S, Yu, CY & Liu, CW 2006, The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715972, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 2006/05/15.

@inproceedings{e6c5f7ecdc3f4d7ab4d7fcd45ab7378e,

title = "The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs",

author = "Lee, {M. H.} and Chang, {S. T.} and S. Maikap and Yu, {C. Y.} and Liu, {C. W.}",

year = "2006",

language = "English",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

}

TY - GEN

T1 - The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

AU - Lee, M. H.

AU - Chang, S. T.

AU - Maikap, S.

AU - Yu, C. Y.

AU - Liu, C. W.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=34247491162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247491162&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34247491162

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006