The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

M. H. Lee, S. T. Chang, S. Maikap, C. Y. Yu, C. W. Liu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Original languageEnglish
    Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
    Volume2006
    Publication statusPublished - 2006 Dec 1
    EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
    Duration: 2006 May 152006 May 17

    Other

    OtherThird International SiGe Technology and Device Meeting, ISTDM 2006
    CountryUnited States
    CityPrinceton, NJ
    Period06/5/1506/5/17

    ASJC Scopus subject areas

    • Computer Science(all)
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

    Cite this

    Lee, M. H., Chang, S. T., Maikap, S., Yu, C. Y., & Liu, C. W. (2006). The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest (Vol. 2006). [1715972]