The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films

Chin Guo Kuo; Chien Chen Diao; Chien Hung Chen; Wen Cheng Tzou; Cheng Fu Yang

doi:10.1007/978-1-4614-6747-2_91

The influences of post-annealing temperature on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films

Chin Guo Kuo, Chien Chen Diao, Chien Hung Chen, Wen Cheng Tzou, Cheng Fu Yang^*

^*Corresponding author for this work

Department of Industrial Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, Sr_0.6Ba_0.4Nb₂O₆ (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.

Original language	English
Title of host publication	Intelligent Technologies and Engineering Systems
Pages	793-801
Number of pages	9
DOIs	https://doi.org/10.1007/978-1-4614-6747-2_91
Publication status	Published - 2013
Event	2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012 - Changhua, Taiwan Duration: 2012 Dec 13 → 2012 Dec 15

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	234 LNEE
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Other

Other	2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012
Country/Territory	Taiwan
City	Changhua
Period	2012/12/13 → 2012/12/15

Keywords

Annealing process
Flat-band shift voltage
Leakage current density

ASJC Scopus subject areas

Industrial and Manufacturing Engineering

Access to Document

10.1007/978-1-4614-6747-2_91

Cite this

Kuo, CG, Diao, CC, Chen, CH, Tzou, WC & Yang, CF 2013, The influences of post-annealing temperature on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films. in Intelligent Technologies and Engineering Systems. Lecture Notes in Electrical Engineering, vol. 234 LNEE, pp. 793-801, 2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012, Changhua, Taiwan, 2012/12/13. https://doi.org/10.1007/978-1-4614-6747-2_91

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abstract = "In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.",

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N2 - In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.

AB - In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.

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