The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films

Chin Guo Kuo, Chien Chen Diao, Chien Hung Chen, Wen Cheng Tzou, Cheng Fu Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.

Original languageEnglish
Title of host publicationIntelligent Technologies and Engineering Systems
Pages793-801
Number of pages9
DOIs
Publication statusPublished - 2013 Aug 8
Event2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012 - Changhua, Taiwan
Duration: 2012 Dec 132012 Dec 15

Publication series

NameLecture Notes in Electrical Engineering
Volume234 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

Other2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012
CountryTaiwan
CityChanghua
Period12/12/1312/12/15

Fingerprint

Annealing
Thin films
Crystal orientation
Temperature
Capacitance
Electric fields
Crystalline materials
Electric potential
Leakage currents
Magnetron sputtering
Furnaces
Current density
Diffraction
Crystallization
Polarization
Data storage equipment

Keywords

  • Annealing process
  • Flat-band shift voltage
  • Leakage current density

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering

Cite this

Kuo, C. G., Diao, C. C., Chen, C. H., Tzou, W. C., & Yang, C. F. (2013). The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films. In Intelligent Technologies and Engineering Systems (pp. 793-801). (Lecture Notes in Electrical Engineering; Vol. 234 LNEE). https://doi.org/10.1007/978-1-4614-6747-2_91

The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films. / Kuo, Chin Guo; Diao, Chien Chen; Chen, Chien Hung; Tzou, Wen Cheng; Yang, Cheng Fu.

Intelligent Technologies and Engineering Systems. 2013. p. 793-801 (Lecture Notes in Electrical Engineering; Vol. 234 LNEE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuo, CG, Diao, CC, Chen, CH, Tzou, WC & Yang, CF 2013, The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films. in Intelligent Technologies and Engineering Systems. Lecture Notes in Electrical Engineering, vol. 234 LNEE, pp. 793-801, 2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012, Changhua, Taiwan, 12/12/13. https://doi.org/10.1007/978-1-4614-6747-2_91
Kuo CG, Diao CC, Chen CH, Tzou WC, Yang CF. The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films. In Intelligent Technologies and Engineering Systems. 2013. p. 793-801. (Lecture Notes in Electrical Engineering). https://doi.org/10.1007/978-1-4614-6747-2_91
Kuo, Chin Guo ; Diao, Chien Chen ; Chen, Chien Hung ; Tzou, Wen Cheng ; Yang, Cheng Fu. / The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films. Intelligent Technologies and Engineering Systems. 2013. pp. 793-801 (Lecture Notes in Electrical Engineering).
@inproceedings{23de752010814b15a0f9b94493e65160,
title = "The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films",
abstract = "In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.",
keywords = "Annealing process, Flat-band shift voltage, Leakage current density",
author = "Kuo, {Chin Guo} and Diao, {Chien Chen} and Chen, {Chien Hung} and Tzou, {Wen Cheng} and Yang, {Cheng Fu}",
year = "2013",
month = "8",
day = "8",
doi = "10.1007/978-1-4614-6747-2_91",
language = "English",
isbn = "9781461467465",
series = "Lecture Notes in Electrical Engineering",
pages = "793--801",
booktitle = "Intelligent Technologies and Engineering Systems",

}

TY - GEN

T1 - The influences of post-annealing temperature on the properties of Sr 0.6Ba0.4Nb2O6 thin films

AU - Kuo, Chin Guo

AU - Diao, Chien Chen

AU - Chen, Chien Hung

AU - Tzou, Wen Cheng

AU - Yang, Cheng Fu

PY - 2013/8/8

Y1 - 2013/8/8

N2 - In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.

AB - In this study, Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio-frequency (RF) magnetron sputtering. After finding the optimal deposition parameters, the deposited SBN thin films were annealed in a conventional furnace. In comparisons of XRD patterns, the annealing process had improved the crystallization and also had large effects on the crystalline orientation of SBN thin films. As the annealing temperature was risen from 600 to 700 C, the diffraction intensities of (410) and (001) peaks really increased. Annealed at 800 C, SBN thin films showed a highly c-axis crystalline orientation in (001) peak. Effects of annealing temperature on the electrical characteristics were recorded and analyzed, including the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves. As the annealing process was used to treat on the as-deposited SBN thin films, the Pr, Ps, and Ec values were really improved. The theorems to cause the drastic variations in the capacitances, the memory windows, and the flat-band shift voltages of SBN thin films were also discussed.

KW - Annealing process

KW - Flat-band shift voltage

KW - Leakage current density

UR - http://www.scopus.com/inward/record.url?scp=84881067336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881067336&partnerID=8YFLogxK

U2 - 10.1007/978-1-4614-6747-2_91

DO - 10.1007/978-1-4614-6747-2_91

M3 - Conference contribution

AN - SCOPUS:84881067336

SN - 9781461467465

T3 - Lecture Notes in Electrical Engineering

SP - 793

EP - 801

BT - Intelligent Technologies and Engineering Systems

ER -