The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

Wei Li Hong; Pei Hsuan Lo; Hao Zhe Chiu; Sheng Fu Horng; Yu Chiang Chao

doi:10.1002/admi.202002240

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(I_xBr₁₋_x)₃ and on the Performance of Perovskite Light-Emitting Diodes

Wei Li Hong, Pei Hsuan Lo, Hao Zhe Chiu, Sheng Fu Horng, Yu Chiang Chao^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this study, lead-free perovskite CsSn(I_xBr₁₋_x)₃ films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI₃ can be transformed to Cs₂SnI₆ upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(I_xBr₁₋_x)₃ film with increased Br⁻ ratio and the CsSnI₃ film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(I_xBr₁₋_x)₃ and Cs₂SnI₆. Defect density of state and binding energy of these materials are also investigated and reported in this study.

Original language	English
Article number	2002240
Journal	Advanced Materials Interfaces
Volume	8
Issue number	12
DOIs	https://doi.org/10.1002/admi.202002240
Publication status	Published - 2021 Jun 23

Keywords

electroluminescence
infrared
lead-free perovskite
light-emitting diodes

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/admi.202002240

Cite this

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(I_xBr₁₋_x)₃ and on the Performance of Perovskite Light-Emitting Diodes. / Hong, Wei Li; Lo, Pei Hsuan; Chiu, Hao Zhe et al.
In: Advanced Materials Interfaces, Vol. 8, No. 12, 2002240, 23.06.2021.

Research output: Contribution to journal › Article › peer-review

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abstract = "In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.",

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author = "Hong, {Wei Li} and Lo, {Pei Hsuan} and Chiu, {Hao Zhe} and Horng, {Sheng Fu} and Chao, {Yu Chiang}",

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AU - Horng, Sheng Fu

AU - Chao, Yu Chiang

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