The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

P. C. Juan; Y. S. Chien; J. Y. Lin; C. P. Cheng; C. H. Liu; H. W. Hsu; H. W. Chen; H. S. Huang

doi:10.1109/INEC.2011.5991692

The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position

P. C. Juan, Y. S. Chien, J. Y. Lin, C. P. Cheng, C. H. Liu^*, H. W. Hsu, H. W. Chen, H. S. Huang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, La-incorporated with HfO₂ thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991692
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

HfLaO
HfO
X-ray diffraction (XRD)
nono-Auger

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991692

Cite this

Juan, P. C., Chien, Y. S., Lin, J. Y., Cheng, C. P., Liu, C. H., Hsu, H. W., Chen, H. W., & Huang, H. S. (2011). The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position. In 4th IEEE International NanoElectronics Conference, INEC 2011 Article 5991692 (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991692

The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position. / Juan, P. C.; Chien, Y. S.; Lin, J. Y. et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991692 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Juan, PC, Chien, YS, Lin, JY, Cheng, CP , Liu, CH, Hsu, HW, Chen, HW & Huang, HS 2011, The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991692, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991692

@inproceedings{4eae4115e6bb47cfb70f4f1c76a7863f,

title = "The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position",

abstract = "In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.",

keywords = "HfLaO, HfO, X-ray diffraction (XRD), nono-Auger",

author = "Juan, {P. C.} and Chien, {Y. S.} and Lin, {J. Y.} and Cheng, {C. P.} and Liu, {C. H.} and Hsu, {H. W.} and Chen, {H. W.} and Huang, {H. S.}",

year = "2011",

doi = "10.1109/INEC.2011.5991692",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

TY - GEN

T1 - The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

AU - Juan, P. C.

AU - Chien, Y. S.

AU - Lin, J. Y.

AU - Cheng, C. P.

AU - Liu, C. H.

AU - Hsu, H. W.

AU - Chen, H. W.

AU - Huang, H. S.

PY - 2011

Y1 - 2011

N2 - In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

AB - In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

KW - HfLaO

KW - HfO

KW - X-ray diffraction (XRD)

KW - nono-Auger

UR - http://www.scopus.com/inward/record.url?scp=80052973460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052973460&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991692

DO - 10.1109/INEC.2011.5991692

M3 - Conference contribution

AN - SCOPUS:80052973460

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -