The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

P. C. Juan; Y. S. Chien; J. Y. Lin; C. P. Cheng; C. H. Liu; H. W. Hsu; H. W. Chen; H. S. Huang

doi:10.1109/INEC.2011.5991692

The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position

P. C. Juan, Y. S. Chien, J. Y. Lin, C. P. Cheng, C. H. Liu, H. W. Hsu, H. W. Chen, H. S. Huang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, La-incorporated with HfO₂ thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991692
Publication status	Published - 2011 Sep 26
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country	Taiwan
City	Tao-Yuan
Period	11/6/21 → 11/6/24

Fingerprint

Keywords

HfLaO
HfO
X-ray diffraction (XRD)
nono-Auger

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Juan, P. C., Chien, Y. S., Lin, J. Y., Cheng, C. P., Liu, C. H., Hsu, H. W., Chen, H. W., & Huang, H. S. (2011). The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991692] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991692

The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position. / Juan, P. C.; Chien, Y. S.; Lin, J. Y.; Cheng, C. P.; Liu, C. H.; Hsu, H. W.; Chen, H. W.; Huang, H. S.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991692 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Juan, PC, Chien, YS, Lin, JY, Cheng, CP , Liu, CH, Hsu, HW, Chen, HW & Huang, HS 2011, The influence of physical and electrical properties in HfO₂ thin film with different lanthanum doping position. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991692, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 11/6/21. https://doi.org/10.1109/INEC.2011.5991692

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abstract = "In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.",

keywords = "HfLaO, HfO, X-ray diffraction (XRD), nono-Auger",

author = "Juan, {P. C.} and Chien, {Y. S.} and Lin, {J. Y.} and Cheng, {C. P.} and Liu, {C. H.} and Hsu, {H. W.} and Chen, {H. W.} and Huang, {H. S.}",

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AU - Cheng, C. P.

AU - Liu, C. H.

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KW - nono-Auger

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Access to Document

10.1109/INEC.2011.5991692