Abstract
In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.
| Original language | English |
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| Title of host publication | 4th IEEE International NanoElectronics Conference, INEC 2011 |
| DOIs | |
| Publication status | Published - 2011 Sep 26 |
| Event | 4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24 |
Publication series
| Name | Proceedings - International NanoElectronics Conference, INEC |
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| ISSN (Print) | 2159-3523 |
Other
| Other | 4th IEEE International Nanoelectronics Conference, INEC 2011 |
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| Country | Taiwan |
| City | Tao-Yuan |
| Period | 11/6/21 → 11/6/24 |
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Keywords
- HfLaO
- HfO
- X-ray diffraction (XRD)
- nono-Auger
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position. / Juan, P. C.; Chien, Y. S.; Lin, J. Y.; Cheng, C. P.; Liu, C. H.; Hsu, H. W.; Chen, H. W.; Huang, H. S.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991692 (Proceedings - International NanoElectronics Conference, INEC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position
AU - Juan, P. C.
AU - Chien, Y. S.
AU - Lin, J. Y.
AU - Cheng, C. P.
AU - Liu, C. H.
AU - Hsu, H. W.
AU - Chen, H. W.
AU - Huang, H. S.
PY - 2011/9/26
Y1 - 2011/9/26
N2 - In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.
AB - In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.
KW - HfLaO
KW - HfO
KW - X-ray diffraction (XRD)
KW - nono-Auger
UR - http://www.scopus.com/inward/record.url?scp=80052973460&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052973460&partnerID=8YFLogxK
U2 - 10.1109/INEC.2011.5991692
DO - 10.1109/INEC.2011.5991692
M3 - Conference contribution
AN - SCOPUS:80052973460
SN - 9781457703799
T3 - Proceedings - International NanoElectronics Conference, INEC
BT - 4th IEEE International NanoElectronics Conference, INEC 2011
ER -