The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

P. C. Juan, Y. S. Chien, J. Y. Lin, C. P. Cheng, C. H. Liu, H. W. Hsu, H. W. Chen, H. S. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

Keywords

  • HfLaO
  • HfO
  • X-ray diffraction (XRD)
  • nono-Auger

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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