The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

C. H. Liu; P. C. Juan; J. Y. Lin

doi:10.1016/j.tsf.2010.05.022

The influence of lanthanum doping position in ultra-thin HfO₂ films for high-k gate dielectrics

C. H. Liu, P. C. Juan, J. Y. Lin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Lanthanum dopant positioning at HfO₂ ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO₂/HfLaO/p-Si and HfLaO/HfO₂/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO₂ and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO₂/Si structure has more silicate formation at the interface than the HfO₂/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.

Original language	English
Pages (from-to)	7455-7459
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2010.05.022
Publication status	Published - 2010 Oct 1

Keywords

Conduction mechanism
Flatband voltage shift
High-k dielectric
X-ray diffraction
X-ray reflectivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2010.05.022

Cite this

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title = "The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics",

abstract = "Lanthanum dopant positioning at HfO2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO2/HfLaO/p-Si and HfLaO/HfO2/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO2/Si structure has more silicate formation at the interface than the HfO2/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.",

keywords = "Conduction mechanism, Flatband voltage shift, High-k dielectric, X-ray diffraction, X-ray reflectivity",

author = "Liu, {C. H.} and Juan, {P. C.} and Lin, {J. Y.}",

note = "Funding Information: The authors would like to acknowledge the National Taiwan Normal University and Ming Chi University of Technology for providing the financial and administrative supports and environments to conduct this study.",

year = "2010",

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doi = "10.1016/j.tsf.2010.05.022",

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T1 - The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

AU - Liu, C. H.

AU - Juan, P. C.

AU - Lin, J. Y.

N1 - Funding Information: The authors would like to acknowledge the National Taiwan Normal University and Ming Chi University of Technology for providing the financial and administrative supports and environments to conduct this study.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Lanthanum dopant positioning at HfO2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO2/HfLaO/p-Si and HfLaO/HfO2/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO2/Si structure has more silicate formation at the interface than the HfO2/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.

AB - Lanthanum dopant positioning at HfO2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO2/HfLaO/p-Si and HfLaO/HfO2/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO2/Si structure has more silicate formation at the interface than the HfO2/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.

KW - Conduction mechanism

KW - Flatband voltage shift

KW - High-k dielectric

KW - X-ray diffraction

KW - X-ray reflectivity

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