The influence of Hf-composition on atomic layer deposition HfSiON gated metal-oxide-semiconductor field-effect transistors after channel-hot-carrier stress

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at Hf : Si = 1 : 3. Moreover, the experimental results also show that the increment of oxide trapped charges (ΔN_ot) depends on Hf content and is about one order of magnitude larger than that of interface traps (ΔN_it) after channel-hot-carrier (CHC) stress. Finally, some important interfacial parameters, including ΔN_it, ΔD_it, and ΔN_ot, have also been characterized through the charge pumping (CP) technique.