Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at Hf : Si = 1 : 3. Moreover, the experimental results also show that the increment of oxide trapped charges (ΔNot) depends on Hf content and is about one order of magnitude larger than that of interface traps (ΔNit) after channel-hot-carrier (CHC) stress. Finally, some important interfacial parameters, including ΔNit, ΔDit, and ΔNot, have also been characterized through the charge pumping (CP) technique.
ASJC Scopus subject areas
- Physics and Astronomy(all)