The influence of Hf-composition on atomic layer deposition HfSiON gated metal-oxide-semiconductor field-effect transistors after channel-hot-carrier stress

Shuang Yuan Chen, Hung Wen Chen, Chuan Hsi Liu, Li Wei Cheng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at Hf : Si = 1 : 3. Moreover, the experimental results also show that the increment of oxide trapped charges (ΔNot) depends on Hf content and is about one order of magnitude larger than that of interface traps (ΔNit) after channel-hot-carrier (CHC) stress. Finally, some important interfacial parameters, including ΔNit, ΔDit, and ΔNot, have also been characterized through the charge pumping (CP) technique.

Original languageEnglish
Article number04C009
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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