@inproceedings{f1f6c0320759419695cf1bbceabf10a4,
title = "The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil",
abstract = "Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric.",
author = "Chiu, {I. Chung} and Huang, {Jung Jie} and Chen, {Yung Pei} and Cheng, {I. Chun} and Chen, {Jian Z.} and Lee, {Min Hung}",
year = "2010",
doi = "10.1149/1.3481220",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "65--69",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
}