The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil

I. Chung Chiu, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng, Jian Z. Chen, Min Hung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages65-69
Number of pages5
Edition5
DOIs
Publication statusPublished - 2010 Dec 1
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

Fingerprint

Nanocrystalline silicon
Thin film transistors
Polyimides
Metal foil
Tensile strain
Gate dielectrics
Threshold voltage
Electrons
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chiu, I. C., Huang, J. J., Chen, Y. P., Cheng, I. C., Chen, J. Z., & Lee, M. H. (2010). The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 65-69). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481220

The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil. / Chiu, I. Chung; Huang, Jung Jie; Chen, Yung Pei; Cheng, I. Chun; Chen, Jian Z.; Lee, Min Hung.

Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 65-69 (ECS Transactions; Vol. 33, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chiu, IC, Huang, JJ, Chen, YP, Cheng, IC, Chen, JZ & Lee, MH 2010, The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 65-69, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/11. https://doi.org/10.1149/1.3481220
Chiu IC, Huang JJ, Chen YP, Cheng IC, Chen JZ, Lee MH. The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil. In Thin Film Transistors 10, TFT 10. 5 ed. 2010. p. 65-69. (ECS Transactions; 5). https://doi.org/10.1149/1.3481220
Chiu, I. Chung ; Huang, Jung Jie ; Chen, Yung Pei ; Cheng, I. Chun ; Chen, Jian Z. ; Lee, Min Hung. / The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil. Thin Film Transistors 10, TFT 10. 5. ed. 2010. pp. 65-69 (ECS Transactions; 5).
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