The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil

I. Chung Chiu, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng*, Jian Z. Chen, Min Hung Lee

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric.

    Original languageEnglish
    Title of host publicationThin Film Transistors 10, TFT 10
    Pages65-69
    Number of pages5
    Edition5
    DOIs
    Publication statusPublished - 2010 Dec 1
    Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
    Duration: 2010 Oct 112010 Oct 15

    Publication series

    NameECS Transactions
    Number5
    Volume33
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
    Country/TerritoryUnited States
    CityLas Vegas, NV
    Period2010/10/112010/10/15

    ASJC Scopus subject areas

    • Engineering(all)

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