The growth of high-quality SiGe films with an intermediate Si layer

S. W. Lee, P. S. Chen*, M. J. Tsai, C. T. Chia, C. W. Liu, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


The growth of high-quality relaxed SiGe epilayer has been achieved by introducing an intermediate Si layer in the SiGe film. It was found that intermediate Si in the SiGe film changed the mechanism of strain relaxation during the growth so that the shallow pits related to strain relief on the surface were suppressed. Such a SiGe/Si/SiGe heterostructure has a threading dislocation density of 8.9 × 105 cm-2 and a root mean square roughness of 3 nm. The intermediate Si layer was also demonstrated to act as effective nucleation site for dislocation loops to relax the mismatch strain. A mechanism of strain relaxation for this intermediate Si layer is proposed. Compared with the conventional compositionally graded buffer layer, it has the advantages of having thinner buffer layer for required degree of relaxation, smoother surface, and maintaining the threading dislocation density at the same level.

Original languageEnglish
Pages (from-to)302-305
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2


  • Intermediate Si layer
  • Root mean square roughness
  • SiGe films
  • Threading dislocation density

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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