The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

M. H. Lee; S. T. Chang; C. C. Lee; J. J. Huang; G. R. Hu; Y. S. Huang

doi:10.1016/j.tsf.2009.10.099

The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

M. H. Lee^*, S. T. Chang, C. C. Lee, J. J. Huang, G. R. Hu, Y. S. Huang

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a μc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

Original language	English
Pages (from-to)	S246-S249
Journal	Thin Solid Films
Volume	518
Issue number	6 SUPPL. 1
DOIs	https://doi.org/10.1016/j.tsf.2009.10.099
Publication status	Published - 2010 Jan 1

Keywords

Deep state
Flexible
Mechanical strain
Redistribution

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.10.099

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@article{14583ba2e3b24df7b8d8709959d5e990,

title = "The gap state density of micro/nano-crystalline silicon active layer on flexible substrate",

abstract = "The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a μc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.",

keywords = "Deep state, Flexible, Mechanical strain, Redistribution",

author = "Lee, {M. H.} and Chang, {S. T.} and Lee, {C. C.} and Huang, {J. J.} and Hu, {G. R.} and Huang, {Y. S.}",

note = "Funding Information: The research was supported by the National Science Council , Taiwan, through grant nos. NSC 97-2622-E-003-003-CC1 and 98-2221-E-003-020-MY3 .",

year = "2010",

month = jan,

day = "1",

doi = "10.1016/j.tsf.2009.10.099",

language = "English",

volume = "518",

pages = "S246--S249",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

number = "6 SUPPL. 1",

}

TY - JOUR

T1 - The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

AU - Lee, M. H.

AU - Chang, S. T.

AU - Lee, C. C.

AU - Huang, J. J.

AU - Hu, G. R.

AU - Huang, Y. S.

N1 - Funding Information: The research was supported by the National Science Council , Taiwan, through grant nos. NSC 97-2622-E-003-003-CC1 and 98-2221-E-003-020-MY3 .

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a μc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

AB - The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a μc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

KW - Deep state

KW - Flexible

KW - Mechanical strain

KW - Redistribution

UR - http://www.scopus.com/inward/record.url?scp=73649135406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73649135406&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.10.099

DO - 10.1016/j.tsf.2009.10.099

M3 - Article

AN - SCOPUS:73649135406

SN - 0040-6090

VL - 518

SP - S246-S249

JO - Thin Solid Films

JF - Thin Solid Films

IS - 6 SUPPL. 1

ER -

The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

Abstract

Keywords

ASJC Scopus subject areas

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