TY - GEN
T1 - The fabrication of single electron transistor by polysilicon thin film and point-contact lithography
AU - Huang, Kuo Dong
AU - Lin, Jyi Tsong
AU - Hu, Shu Fen
AU - Sung, Chin Lung
PY - 2006
Y1 - 2006
N2 - In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.
AB - In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.
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U2 - 10.1109/ICMEL.2006.1650918
DO - 10.1109/ICMEL.2006.1650918
M3 - Conference contribution
AN - SCOPUS:77956503743
SN - 1424401178
SN - 9781424401178
T3 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
SP - 149
EP - 152
BT - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
PB - IEEE Computer Society
T2 - 2006 25th International Conference on Microelectronics, MIEL 2006
Y2 - 14 May 2006 through 17 May 2006
ER -