The fabrication of single electron transistor by polysilicon thin film and point-contact lithography

Kuo Dong Huang, Jyi Tsong Lin, Shu-Fen Hu, Chin Lung Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.

Original languageEnglish
Title of host publication2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
Pages157-160
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia
Duration: 2006 May 142006 May 17

Publication series

Name2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Other

Other2006 25th International Conference on Microelectronics, MIEL 2006
CountrySerbia
CityBelgrade
Period06/5/1406/5/17

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Huang, K. D., Lin, J. T., Hu, S-F., & Sung, C. L. (2006). The fabrication of single electron transistor by polysilicon thin film and point-contact lithography. In 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (pp. 157-160). [1650918] (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings). https://doi.org/10.1109/ICMEL.2006.1650918