The fabrication of single electron transistor by polysilicon thin film and point-contact lithography

Kuo Dong Huang, Jyi Tsong Lin, Shu-Fen Hu, Chin Lung Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.

Original languageEnglish
Title of host publication2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
Pages157-160
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia
Duration: 2006 May 142006 May 17

Publication series

Name2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Other

Other2006 25th International Conference on Microelectronics, MIEL 2006
CountrySerbia
CityBelgrade
Period06/5/1406/5/17

Fingerprint

Single electron transistors
Point contacts
Polysilicon
Lithography
Fabrication
Thin films
Insulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Huang, K. D., Lin, J. T., Hu, S-F., & Sung, C. L. (2006). The fabrication of single electron transistor by polysilicon thin film and point-contact lithography. In 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (pp. 157-160). [1650918] (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings). https://doi.org/10.1109/ICMEL.2006.1650918

The fabrication of single electron transistor by polysilicon thin film and point-contact lithography. / Huang, Kuo Dong; Lin, Jyi Tsong; Hu, Shu-Fen; Sung, Chin Lung.

2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006. p. 157-160 1650918 (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, KD, Lin, JT, Hu, S-F & Sung, CL 2006, The fabrication of single electron transistor by polysilicon thin film and point-contact lithography. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings., 1650918, 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, pp. 157-160, 2006 25th International Conference on Microelectronics, MIEL 2006, Belgrade, Serbia, 06/5/14. https://doi.org/10.1109/ICMEL.2006.1650918
Huang KD, Lin JT, Hu S-F, Sung CL. The fabrication of single electron transistor by polysilicon thin film and point-contact lithography. In 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006. p. 157-160. 1650918. (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings). https://doi.org/10.1109/ICMEL.2006.1650918
Huang, Kuo Dong ; Lin, Jyi Tsong ; Hu, Shu-Fen ; Sung, Chin Lung. / The fabrication of single electron transistor by polysilicon thin film and point-contact lithography. 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006. pp. 157-160 (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings).
@inproceedings{565cf32186824d40b25b3e24b5d63d65,
title = "The fabrication of single electron transistor by polysilicon thin film and point-contact lithography",
abstract = "In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.",
author = "Huang, {Kuo Dong} and Lin, {Jyi Tsong} and Shu-Fen Hu and Sung, {Chin Lung}",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/ICMEL.2006.1650918",
language = "English",
isbn = "1424401178",
series = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
pages = "157--160",
booktitle = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",

}

TY - GEN

T1 - The fabrication of single electron transistor by polysilicon thin film and point-contact lithography

AU - Huang, Kuo Dong

AU - Lin, Jyi Tsong

AU - Hu, Shu-Fen

AU - Sung, Chin Lung

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.

AB - In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.

UR - http://www.scopus.com/inward/record.url?scp=77956503743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956503743&partnerID=8YFLogxK

U2 - 10.1109/ICMEL.2006.1650918

DO - 10.1109/ICMEL.2006.1650918

M3 - Conference contribution

SN - 1424401178

SN - 9781424401178

T3 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

SP - 157

EP - 160

BT - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

ER -